BU931ZP DATASHEET PDF

BU931ZP DATASHEET PDF

BUZP datasheet, BUZP circuit, BUZP data sheet: SAVANTIC – Silicon NPN Power Transistors,alldatasheet, datasheet, Datasheet search site for. BUZP isc Silicon NPN Power Transistor. DESCRIPTIONHigh VoltageDARLINGTONIntegrated High Voltage Zener APPLICATIONSApplication in high. BUZP from STMicroelectronics, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.

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Maximum voltage must not exceed 48 V.

Factional HP motors are being used for robotics and automated handling. Ddatasheet output rectification fast recovery power diodes page 55 are available. Ceramic Pin-grid arrays — 64,68,84, and leads. This configuration also has the advantage of reducing the risk of lead bending datashdet shipping — a real problem with standard DIP packages.

For easy consultation the products have been divided into several sections according to the main application sectors. Max output current is 3. This pin is connected to case. To be connected to GND 2 when not used.

BU931ZP DATASHEET

For low power applications SOT TO and TO-3 devices may be adequate but as power levels rise paralleling these devices causes various problems. On request virtually all devices are supplied in wafer form for hybrid assembly; SGS has established high volume experience in this service.

The library consists of 17 analog blocks, 1 6 datashret 2 L logic blocks and an ECL prescaler. Ceramic Pin-grid arrays — 64,68,84,, and leads. Maximum voltage must not exceed 40 V. Ceramic chip carriers — 28,44,52,68,84 and leads. The ROM capacity is limited to 4K. The customer designs and evaluates the proposed design with the help of a series of development parts, each containing one or more of the library cells.

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These step down regulators shielded for EMI, can provide local on-card regulation, or be used in central power supply systems, in both professional and industrial applications. Binary Counter with Sync.

BUZP Savantic, Inc. | WIN SOURCE

Henrique Schaumann – CJ33 Tel.: Datashet – Ground Common ground of high current path. All the products are supported by an extensive documentation that is available on request from your nearest SGS sales office or Distributor. The full design compatibility allows an easy migration from gate arrays to standard cells.

The following represent a small selection from a very wide range. SGS also offers packages of almost every type, ranging from the 8-pin small outline micropackage to the lead Multiwatt plastic power package.

Datasheeets & Application Notes

From that small nucleus, the company has evolved into a Group of Companies, operating on a worldwide basis as a broad range semiconductor producer, with billings over million dollars and employing over people.

Southfield, Ml Civic Center Dr. This step down regulator shielded for EMI, provides local on-card regulation.

The following are a selection of some of the most popular devices. A trr max ns 8. The GS-R incorporates many extra features like thermal protection, soft start, load crow bar pro- tection, reset output, non-latching short circuit protection.

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This is the optimum solution when small numbers of SMICs are being used in mixed surface and through-hole mounting assemblies. Suitable control circuits can be found on page Their high gain makes them suitable for driving directly by SGS con- trol circuits, see page The family has a unique architecture, the main features of which are Operating System software support, Compiler support and memory ma- nagement.

The power dissipation is equivalent to a non isolated SOT TO device mounted with external electrical isolation. If further information is required SGS will provide individual data sheets for all the devices on request.

Matching PWM control circuits may be found on pages 56 to The epitaxial base process provides cost effective complementary pairs of transistors, and for higher gain darlingtons. GND 2 – Ground Common ground of high current path. The case of the module is connected to this pin. Fiberglass Pin-grid arrays — 64,68,84,, and leads. In addition the availability of V devices offers extra margin for flyback topologies used at up to 50kHz.

Lauderdale Orlando Kierulff Electronic Ft. This publication superse- des and substitutes all information previously supplied.